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Transistor
2SC2404
Silicon NPN epitaxial planer type
For high-frequency amplification
Unit: mm
s Features
q q q
2.8 -0.3 0.650.15
+0.2
1.5 -0.05
+0.25
0.650.15
2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg
30 20 3 15 150 150 -55 ~ +150
V V V mA mW C C
1:Base 2:Emitter 3:Collector
JEDEC:TO-236 EIAJ:SC-59 Mini Type Package
Marking symbol : U
s Electrical Characteristics
Parameter Collector to base voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Transition frequency Common emitter reverse transfer capacitance Power gain Noise figure
(Ta=25C)
Symbol VCBO VEBO hFE* VBE fT Cre PG NF Conditions IC = 10A, IE = 0 IE = 10A, IC = 0 VCB = 6V, IE = -1mA VCB = 6V, IE = -1mA VCB = 6V, IE = -1mA, f = 100MHz VCE = 6V, IC = 1mA, f = 10.7MHz VCB = 6V, IE = -1mA, f = 100MHz VCB = 6V, IE = -1mA, f = 100MHz 450 min 30 3 40 0.72 650 0.8 24 3.3 1 260 V MHz pF dB dB typ max Unit V V
*h
FE
Rank classification
Rank hFE Marking Symbol B 40 ~ 110 UB C 65 ~ 160 UC D 100 ~ 260 UD
0 to 0.1
Ratings
Unit
0.1 to 0.3 0.40.2
0.8
(Ta=25C)
1.1 -0.1
0.16 -0.06
+0.2
+0.1
0.4 -0.05
Optimum for RF amplification of FM/AM radios. High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
0.95
2.9 -0.05
1
1.90.2
+0.2
0.95
3
+0.1
1.45
1
Transistor
PC -- Ta
200 12 Ta=25C 175 10 IB=100A 10
2SC2404
IC -- VCE
12 VCE=6V Ta=25C
IC -- I B
Collector power dissipation PC (mW)
Collector current IC (mA)
150 125 100 75 50 25 0 0 20 40 60 80 100 120 140 160
8
80A
Collector current IC (mA)
18
8
60A 6 40A 4 20A
6
4
2
2
0 0 6 12
0 0 60 120 180
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base current IB (A)
IC -- VBE
Collector to emitter saturation voltage VCE(sat) (V)
30 VCE=6V 25 25C Ta=75C 20 -25C 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1
VCE(sat) -- IC
IC/IB=10 360
hFE -- IC
VCE=6V
Forward current transfer ratio hFE
300
Collector current IC (mA)
240 Ta=75C 25C 120 -25C
15
180
10
25C
Ta=75C
5
-25C
60
0 0 0.4 0.8 1.2 1.6 2.0
0.3
1
3
10
30
100
0 0.1
0.3
1
3
10
30
100
Base to emitter voltage VBE (V)
Collector current IC (mA)
Collector current IC (mA)
fT -- IE
Common emitter reverse transfer capacitance Cre (pF)
1200 VCB=6V Ta=25C 2.4
Cre -- VCE
Collector output capacitance Cob (pF)
IC=1mA f=10.7MHz Ta=25C 1.2
Cob -- VCB
IE=0 f=1MHz Ta=25C
Transition frequency fT (MHz)
1000
2.0
1.0
800
1.6
0.8
600
1.2
0.6
400
0.8
0.4
200
0.4
0.2
0 - 0.1 - 0.3
-1
-3
-10
-30
-100
0 0.1
0 0.3 1 3 10 30 100 0 5 10 15 20 25 30
Emitter current IE (mA)
Collector to emitter voltage VCE (V)
Collector to base voltage VCB (V)
2
Transistor
PG -- IE
40 35 f=100MHz Rg=50 Ta=25C 12
2SC2404
NF -- IE
f=100MHz Rg=50k Ta=25C 20 18 yie=gie+jbie VCE=10V
150 -4mA 100
bie -- gie
Input susceptance bie (mS)
10
16 14 12
58 -2mA 100
-7mA
VCE=10V 6V
Noise figure NF (dB)
Power gain PG (dB)
30 25 20 15 10 5 0 - 0.1 - 0.3
8
6
10 8 6 4 2
-1mA
IE=- 0.5mA
58
4
VCE=6V, 10V
25 25
2
f=10.7MHz
-1
-3
-10
-30
-100
0 - 0.1 - 0.3
0 -1 -3 -10 -30 -100 0 3 6 9 12 15
Emitter current IE (mA)
Emitter current IE (mA)
Input conductance gie (mS)
bre -- gre
0
bfe -- gfe
Forward transfer susceptance bfe (mS)
- 0.4mA -1mA 100 150 -2mA 10.7 58
boe -- goe
IE=- 0.5mA -1mA
Reverse transfer susceptance bre (mS)
yre=gre+jbre VCE=10V -1 -4mA -2
10.7 25
0
1.2
150 -2mA -4mA 100
-20
Output susceptance boe (mS)
1.0
-1mA 58 IE=-7mA
-40
150 -4mA 100 58
0.8 -7mA 0.6 58 0.4 25 0.2 f=10.7MHz 0 0 0.1 0.2 0.3 yoe=goe+jboe VCE=10V 0.4 0.5
-3
-60
f=150MHz IE=-7mA 100
-4
100
-80
-5 f=150MHz -6 - 0.5 - 0.4 - 0.3 - 0.2 - 0.1 0
-100 yfe=gfe+jbfe VCE=10V 0 20 40 60 80 100
-120
Reverse transfer conductance gre (mS)
Forward transfer conductance
gfe (mS)
Output conductance goe (mS)
3
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
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A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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